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The electronic structure of heterointerfaces is a pivotal factor for their device functionality. We use soft x-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures on both sides of the Schottky heterointerface formed by epitaxial films of the superconducting NbN on semiconducting GaN, and determine their momentum-dependent interfacial band offset as well as the band-bending profile. We find, in particular, that the Fermi states in NbN are well separated in energy and momentum from the states in GaN, excluding any notable electronic cross-talk of the superconducting states in NbN to GaN. We support the experimental findings with first-principles calculations for bulk NbN and GaN. The Schottky barrier height obtained from photoemission is corroborated by electronic transport and optical measurements. The momentum-resolved understanding of electronic properties of interfaces elucidated in our work opens up new frontiers for the quantum materials where interfacial states play a defining role.more » « less
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Kirchner, Stefan ; Paschen, Silke ; Chen, Qiuyun ; Wirth, Steffen ; Feng, Donglai ; Thompson, Joe D. ; Si, Qimiao ( , Reviews of Modern Physics)
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Zou, Ke ; Mandal, Subhasish ; Albright, Stephen D. ; Peng, Rui ; Pu, Yujia ; Kumah, Divine ; Lau, Claudia ; Simon, Georg H. ; Dagdeviren, Omur E. ; He, Xi ; et al ( , Physical Review B)